Plasma Etching at IEN: An Overview of Equipment and Processes
|Abstract:||Plasma etching has become one of the most important techniques in IC fabrication. It plays a critical role in creating geometries of extremely small size for highly integrated devices. Plasma etching techniques utilize plasma created from appropriate gas mixtures and RF excitation to remove surface material physically or chemically (or both) from a substrate. Plasma etching can be categorized by the material as metal etching, silicon etching and dielectric etching, or it can be categorized by the technology as electron cyclotron resonance (ECR), reactive ion etching (RIE) or inductively coupled ion (ICP).|
Hang Chen presented a lecture at the Nano@Tech Meeting on September 10, 2013 at 12 noon in room 1116 of the Marcus Nanotechnology Building.
Dr. Hang Chen received his bachelor and master degrees in chemistry from Fudan University in Shanghai, China. He obtained his doctorate, also in chemistry, from Georgia Tech in 2005 and was a post-doc at the Nanotechnology Research Center before joining the IEN as a Research Scientist in 2008. His research interests include chemically sensitive field-effect transistors, MEMS-CMOS device integration, and organic electronics.
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