NNIN Process and Characterization Tools
Tool Database Search Result

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Site	Tool Name	Tool ID	Tool Mfg	Tool Model	Tool Area	Tool Desc	Tool Comment
Cornell	GSI Plasma CVD PECVD	CNF 0303	GSI		Thin film Deposition and Growth		Whole Wafers Only
Cornell	GSI single wafer PECVD	CNF 0303	GSI Group Sciences		Thin film Deposition and Growth	full wafer single wafer PECVD of silicon based films on silicon. Poly, oxide, n	Clean "silicon" materials only
Cornell	IPE Plasma CVD PECVD	CNF 0304	Ion Plasma Equipment	1000	Thin film Deposition and Growth
Harvard U.	Nexx PECVD	CVD 2	Nexx Systems	Cirrus 150	Thin film Deposition and Growth	NEXX CVD-2 is an ECR (electron cyclotron resonance) plasma-enhanced CVD system.	6" Chuck, Loadlock, RF, Microwave, Heat/Cool, Oxide, nitride
Harvard U.	STS PECVD	CVD 3	STS	LPX PECVD	Thin film Deposition and Growth	Deposition temperature up to: 400C. This system has a low frequency generator.	6", Oxide, Nitride, Amorphous (doped/undoped)
Georgia Tech	Astex ECR PECVD	GT 103	Astex	AX 3060-1	Thin film Deposition and Growth		Diamond-like Carbon, Low Temperature Oxide / Nitride PECVD
Georgia Tech	Plasma-Therm PECVD	GT 163	Plasma Therm	Waf’r/Batch 790 Series	Thin film Deposition and Growth
Georgia Tech	STS PECVD	GT 179	STS	Multiplex CVD	Thin film Deposition and Growth
Georgia Tech	Unaxis PECVD	GT 193	Unaxis	Unaxis 78324	Thin film Deposition and Growth
Georgia Tech	STS PECVD 2	GT 220	STS	PECVD	Thin film Deposition and Growth
Penn State U.	AMAT Cluster Tool PECVD Chamber #1	PSU 016	Applied Materials	P-5000	Thin film Deposition and Growth		Liquid Precursors
Penn State U.	AMAT Cluster Tool PECVD Chamber #2	PSU 017	Applied Materials	P-5000	Thin film Deposition and Growth		Silicon OxyNitride Chamber
Penn State U.	Trion HDP PECVD	PSU 018			Thin film Deposition and Growth
Stanford	STS PECVD System	SNF sts	STS		Thin film Deposition and Growth
U. C. Santa Barbara	PECVD	UCSB 208	PlasmaTherm	790	Thin film Deposition and Growth		SiO2 and SiNx dep
U. C. Santa Barbara	ICP Deposition PECVD	UCSB 211	Unaxis	VLR	Thin film Deposition and Growth		SiO2 and SiNx ICP PECVD
U. Michigan	GSI PECVD	UMI 400	GSI		Thin film Deposition and Growth
U. Michigan	PT790 - PECVD chamber	UMI 411	PlasmaTherm	790	Thin film Deposition and Growth		PECVD of a-Si:H, SiO2, Si3N4, SiC
U. Minnesota	pecvd	UMN 900047	Plasmatherm	model 340	Thin film Deposition and Growth	Plasma-enhanced chemical vapor deposition of poly silicon, silicon nitride and s	Wafer sizes to 200mm (qty 1), 350C max temp, also used for ammonia flood for image reversal process
U. Texas Austin	790 Plasmatherm #1 PECVD	UT 790 Plasmatherm #1	Plasmatherm	790-6"	Thin film Deposition and Growth	SiO2, SiN, aSi deposition Maximum process temperature 300C	PECVD chamber Up to 6" wafer CF4-8%O2 to perform in-situ cleaning
Site	Tool Name	Tool ID	Tool Mfg	Tool Model	Tool Area	Tool Desc	Tool Comment