National Nanotechnology Infrastructure Network

National Nanotechnology Infrastructure Network

Serving Nanoscale Science, Engineering & Technology


CV Simulator for Silicon MOS Structures


The UT-QUANT provides quasi-static CV characteristics for one-dimensional silicon MOS structures. It has the ability to determine quantization effects within MOS inversion layers. The leakage current due to electron tunneling through thin gate oxides in MOS devices can also be calculated. The code self-consistently calculates the sheet carrier concentration in the device for a range of biases and from this builds up the CV characteristics. Options are available to perform both semi-classical and quantum calculations to gauge the differences predicted by the two models. In larger systems, semiclassical approaches are computationally more efficient and provide a reasonable degree of accuracy. For smaller MOS systems, care must be taken to address quantization issues related to nanoscale dimensions. The code also has the ability to incorporate strain effects into device characteristics.


  • CV characteristics of silicon MOS devices
  • Leakage current due to electron tunneling through oxide layers
  • Inversion and accumulation layer band diagrams and wave functions


W.-K. Shih, S. Jallepalli, G. Chindalore, C. Maziar, A. F. Tasch (University of Texas, Austin)

Getting Started:

  • Some pointers on installing UTQUANT: (install instructions)
  • Users Guide (pdf)
  • Getting a copy of UTQUANT or running it on the CNF cluster:    Contact Derek Stewart, stewart (at)

Relevant Research Articles:

Questions, Comments...

Please contact:

Derek Stewart
stewart (at)
Cornell Nanoscale Science and Technology Facility