Process Blog
Wafer Level AlGe Eutectic Bonding for MEMS-Electronic-Photonic Heterogeneous Integration
Niels Quack (1), Sangyoon Han (2), Ming C. Wu (3) Abstract: An AlGe eutectic wafer level bonding process is presented and...
1 : Postdoctoral Fellow at UC Berkeley, 253M Cory Hall, Berkeley, CA, 94720-1770, quack@eecs.berkeley.edu
2 : UC Berkeley, sangyoon@eecs.berkeley.edu, 3 : UC Berkeley, wu@eecs.berkeley.edu
Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry at the UCSB Nanofabrication Facility
Ning Cao, PhD. UCSB Nanofab Development Engineer For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-...
Brian Thibeault, Ph D. UCSB Nanofab Project Scientist
Steve Nichols, Ph D.
Atomic Layer Deposition of SrO at Stanford Nanofabrication Facility
Michelle Rincon and Woo Shik Jung, Stanford Nanofabrication Facility Our goal at the SNF is to enable users to develop any film they need using our Cambridge Nanotech Savannah (thermal ALD system) and Fiji (plasma-enhanced ALD) systems. One great example of this is our newly developed SrO deposition process. The SrO film was developed using the Bis(1,2,4-tritertiarybutylcyclopentadienyl)strontium precursor. Since this precursor has a low vapor pressure (0.6mmHg at...
Deep Silicon Etching at Stanford-Plasma Therm Versaline DSE
Justin Snapp, Stanford Nanofabrication Facility For microelectromechanical systems (MEMS) and other applications, deep reactive ion etching (DRIE) of silicon is an important process enabling deep etching and high aspect ratio structures. To achieve high aspect ratio structures and high selectivity to the masking material, DRIE utilizes a process of time division multiplexing (TDM) involving rapid cycles of deposition and etch steps.
Lurie Nanofabrication Facility takes lead on Nanoscale Patterning on Nonplanar Surfaces using Electron Beam Lithography
Vishva Ray and Khaled Mnaymneh, University of Michigan Patterning nanoscale geometries on curved and nonplanar surfaces is essential for next-generation devices particularly in the areas of flexible electronics, optics, metamaterials, bioengineering and fluidics. While current methods are extremely limited in applicability and scope, patterning nonplanar surfaces using electron beam lithography offers a distinct advantage with respect to feature sizes, repeatability...
DRIE on Si and Dielectrics at Michigan Lurie Nanofabrication Facility
Kevin Owen , University of Michigan With the recent expansion at the LNF, three new SPTS ICP systems were installed: two Pegasus deep silicon etchers and one APS system, designed for deep glass and dielectric etching. These tools have pushed the limits of high aspect ratio plasma etching. The first part of this paper covers deep silicon etching using the SPTS Pegasus tool, including standard process capabilities as well as two novel...
Posted January 2013
NNIN ALD Processes and NNIN ALD Workshop
Lynn Rathbun, NNIN Atomic Layer Deposition (ALD) is an important new thin film deposition technology. ALD allows for deposition of ultra thin, high uniformity films over large topographical variations. The process relies upon self limiting chemical reactions to depost one molecular layer at a time. The heart of ALD is thus in the development of the exotic organic precursors that allow the growth of a particular films. Each of these...
Posted Jan. 2013
Ink-jet Deposition for Direct Write Patterning
David Gottfried, Senior Research Scientist, Georgia Tech David Gottfried of the NNIN Site at Georgia Tech recently gave a lecture on the use of Ink Jet Deposition for Direct Write Patterning. You can view this lecture in the NNIN Video Gallery or access it here http://nnin.org/news-events/video-gallery/ink-jet-deposition-direct...
Posted Jan 2013
Process Versatility of FEI's Quanta 3D Dual-Beam FIB
Kevin Roberts, Scientist, University of Minnesota The Quanta 200 3D is a Dual-Beam system (fitted with both an E-beam and an Ion Beam) comprised of a tungsten electron column and a Ga ion column that utilizes either high vacuum or environmental SEM (ESEM) technology to section, image, and analyze a wide range of conducting and non-conducting samples. This system offers the capability for...
Posted January 2013
Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry (UCSB)
Ning Cao, PhD. UCSB Nanofab Development Engineer For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-trenching at the base of the structure and bowing of the sidewalls due to ion...