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Process Blog

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Nanoscale Etching of Silicon with High Mask Selectivity using SF6/C4F8/Ar ICP Etching in Plasma-Therm SLR 790 System

09.17.13

Yung-Jr Hung (NTUST, Taiwan) and Brian Thibeault (UCSB)

September 2013

Nanoscale and fine-scale etching recipes of silicon are needed more and more for silicon-based photonics and other applications at the UCSB facility. This particular work, done a few years ago, highlights the recipes developed in the UCSB nanofabrication facility for these applications. The original application pursued by this work was for silicon-based photonic crystal...

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NNIN Etch Workshop Summary and NNIN Dry Etch Capabilities

06.12.13

Vince Genova

Cornell NanoScale Science and Technology Facility

A NNIN Etch Workshop for NNIN Staff was held at Cornell University on May 21-22, 2013.  This was the third NNIN etch workshop held at Cornell since 2006.  Etch personnel from every NNIN site attended and presented information on their current etch capabilities, along with current process results.   Equipment details such as current gas chemistries, wafer sizes, temperature ranges and many others...

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Wafer Level AlGe Eutectic Bonding for MEMS-Electronic-Photonic Heterogeneous Integration

04.28.13

Niels Quack (1), Sangyoon Han (2), Ming C. Wu (3)
1 : Postdoctoral Fellow at UC Berkeley, 253M Cory Hall, Berkeley, CA, 94720-1770, quack@eecs.berkeley.edu
2 : UC Berkeley, sangyoon@eecs.berkeley.edu, 3 : UC Berkeley, wu@eecs.berkeley.edu

Abstract: An AlGe eutectic wafer level bonding process is presented and...

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Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry at the UCSB Nanofabrication Facility

03.27.13

Ning Cao, PhD. UCSB Nanofab Development Engineer
Brian Thibeault, Ph D. UCSB Nanofab Project Scientist
Steve Nichols, Ph D.

For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-...

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Atomic Layer Deposition of SrO at Stanford Nanofabrication Facility

03.11.13

Michelle Rincon and Woo Shik Jung, Stanford Nanofabrication Facility

Our goal at the SNF is to enable users to develop any film they need using our Cambridge Nanotech Savannah (thermal ALD system) and Fiji (plasma-enhanced ALD) systems.  One great example of this is our newly developed SrO deposition process.

The SrO film was developed using the Bis(1,2,4-tritertiarybutylcyclopentadienyl)strontium precursor.  Since this precursor has a low vapor pressure (0.6mmHg at...

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Deep Silicon Etching at Stanford-Plasma Therm Versaline DSE

02.26.13

Justin Snapp, Stanford Nanofabrication Facility

For microelectromechanical systems (MEMS) and other applications, deep reactive ion etching (DRIE) of silicon is an important process enabling deep etching and high aspect ratio structures.  To achieve high aspect ratio structures and high selectivity to the masking material, DRIE utilizes a process of time division multiplexing (TDM) involving rapid cycles of deposition and etch steps. 

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Lurie Nanofabrication Facility takes lead on Nanoscale Patterning on Nonplanar Surfaces using Electron Beam Lithography

01.29.13

Vishva Ray  and Khaled Mnaymneh, University of Michigan

Patterning nanoscale geometries on curved and nonplanar surfaces is essential for next-generation devices particularly in the areas of flexible electronics, optics, metamaterials, bioengineering and fluidics.  While current methods are extremely limited in applicability and scope, patterning nonplanar surfaces using electron beam lithography offers a distinct advantage with respect to feature sizes, repeatability...

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DRIE on Si and Dielectrics at Michigan Lurie Nanofabrication Facility

01.29.13

Kevin Owen , University of Michigan
Posted January 2013

With the recent expansion at the LNF, three new SPTS ICP systems were installed: two Pegasus deep silicon etchers and one APS system, designed for deep glass and dielectric etching. These tools have pushed the limits of high aspect ratio plasma etching. The first part of this paper covers deep silicon etching using the SPTS Pegasus tool, including standard process capabilities as well as two novel...

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NNIN ALD Processes and NNIN ALD Workshop

01.29.13

Lynn Rathbun, NNIN
Posted Jan. 2013

Atomic Layer Deposition (ALD) is an important new thin film deposition technology. ALD allows for deposition of ultra thin, high uniformity films over large topographical variations. The process relies upon self limiting chemical reactions to depost one molecular layer at a time. The heart of ALD is thus in the development of the exotic organic precursors that allow the growth  of  a particular films. Each of these...

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Ink-jet Deposition for Direct Write Patterning

01.25.13

David Gottfried, Senior Research Scientist, Georgia Tech
Posted Jan 2013

David Gottfried of the NNIN Site at Georgia Tech recently gave a lecture on the use of Ink Jet Deposition for Direct Write Patterning.

You can view this lecture in the NNIN Video Gallery or access it here  http://nnin.org/news-events/video-gallery/ink-jet-deposition-direct...

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