Process Blogs containing ALD
Atomic Layer Deposition of SrO at Stanford Nanofabrication Facility
Michelle Rincon and Woo Shik Jung, Stanford Nanofabrication Facility Our goal at the SNF is to enable users to develop any film they need using our Cambridge Nanotech Savannah (thermal ALD system) and Fiji (plasma-enhanced ALD) systems. One great example of this is our newly developed SrO deposition process. The SrO film was developed using the Bis(1,2,4-tritertiarybutylcyclopentadienyl)strontium precursor. Since this precursor has a low vapor pressure (0.6mmHg at...
NNIN ALD Processes and NNIN ALD Workshop
Lynn Rathbun, NNIN Atomic Layer Deposition (ALD) is an important new thin film deposition technology. ALD allows for deposition of ultra thin, high uniformity films over large topographical variations. The process relies upon self limiting chemical reactions to depost one molecular layer at a time. The heart of ALD is thus in the development of the exotic organic precursors that allow the growth of a particular films. Each of these...
Posted Jan. 2013
New ALD Processes at Cornell on the Oxford FlexAl
Vincent Genova, CNF Process Engineer Since CNF’s purchase of an Oxford Instruments FlexAL ALD system in 2008, we have continued to develop new thin film processes, both on our own and cooperatively with Oxford. Our ALD system has both thermal and plasma enhanced (PEALD) deposition capability for materials derived from hafnium (Hf), aluminum (Al), tantalum (Ta), and silicon (Si) based organometallic and organosilane precursors. In addition...
Posted October 2012