National Nanotechnology Infrastructure Network

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Process Blogs containing Bosch

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Deep Silicon Etching at Stanford-Plasma Therm Versaline DSE

02.26.13

Justin Snapp, Stanford Nanofabrication Facility

For microelectromechanical systems (MEMS) and other applications, deep reactive ion etching (DRIE) of silicon is an important process enabling deep etching and high aspect ratio structures.  To achieve high aspect ratio structures and high selectivity to the masking material, DRIE utilizes a process of time division multiplexing (TDM) involving rapid cycles of deposition and etch steps. 

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DRIE on Si and Dielectrics at Michigan Lurie Nanofabrication Facility

01.29.13

Kevin Owen , University of Michigan
Posted January 2013

With the recent expansion at the LNF, three new SPTS ICP systems were installed: two Pegasus deep silicon etchers and one APS system, designed for deep glass and dielectric etching. These tools have pushed the limits of high aspect ratio plasma etching. The first part of this paper covers deep silicon etching using the SPTS Pegasus tool, including standard process capabilities as well as two novel...

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