Process Blogs containing ICP
Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry (UCSB)
Ning Cao, PhD. UCSB Nanofab Development Engineer For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-trenching at the base of the structure and bowing of the sidewalls due to ion...
High aspect ratio etching of sub 100 nm structures in dielectrics
Significant Upgrade to the Oxford PlasmaLab 100 at Cornell for Nanoscale Dielectric Etching Enables Improved Etching of High Aspect Ratio Dielectric Structures
Vincent Genova, CNF Process Engineer Earlier this year, a substantial upgrade to the Oxford 100 ICP etch system at Cornell was completed. This upgrade includes the installation of a large 12 gas pod, a gas ring manifold, and the latest version of the PLC. The installation of a...
Posted October 2012