National Nanotechnology Infrastructure Network

National Nanotechnology Infrastructure Network

Serving Nanoscale Science, Engineering & Technology

Process Blogs containing ICP

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Nanoscale Etching of Silicon with High Mask Selectivity using SF6/C4F8/Ar ICP Etching in Plasma-Therm SLR 790 System

09.17.13

Yung-Jr Hung (NTUST, Taiwan) and Brian Thibeault (UCSB)

September 2013

Nanoscale and fine-scale etching recipes of silicon are needed more and more for silicon-based photonics and other applications at the UCSB facility. This particular work, done a few years ago, highlights the recipes developed in the UCSB nanofabrication facility for these applications. The original application pursued by this work was for silicon-based photonic crystal...

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Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry (UCSB)

01.03.13

Ning Cao, PhD. UCSB Nanofab Development Engineer

For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-trenching at the base of the structure and bowing of the sidewalls due to ion...

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High aspect ratio etching of sub 100 nm structures in dielectrics

10.15.12

Significant Upgrade to the Oxford PlasmaLab 100 at Cornell for Nanoscale Dielectric Etching Enables Improved Etching of High Aspect Ratio Dielectric Structures

Vincent Genova, CNF Process Engineer
Posted October 2012

Earlier this year, a substantial upgrade to the Oxford 100 ICP etch system at Cornell was completed.  This upgrade includes the installation of a large 12 gas pod, a gas ring manifold, and the latest version of the PLC.  The installation of a...

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