National Nanotechnology Infrastructure Network

National Nanotechnology Infrastructure Network

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Process Blogs containing ICP RIE

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Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry at the UCSB Nanofabrication Facility

03.27.13

Ning Cao, PhD. UCSB Nanofab Development Engineer
Brian Thibeault, Ph D. UCSB Nanofab Project Scientist
Steve Nichols, Ph D.

For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-...

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