Process Blogs containing InP
Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry at the UCSB Nanofabrication Facility
Ning Cao, PhD. UCSB Nanofab Development Engineer For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-...
Brian Thibeault, Ph D. UCSB Nanofab Project Scientist
Steve Nichols, Ph D.
Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry (UCSB)
Ning Cao, PhD. UCSB Nanofab Development Engineer For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-trenching at the base of the structure and bowing of the sidewalls due to ion...