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Photocurable Nanoimprint (P-NIL) Process for Patterning Nitride and Oxide (Cornell)

12.21.12

Vincent Genova, Process Engineer, Cornell
Posted Dec. 2012

The recently established photocurable nanoimprint (P-NIL) process has been demonstrated with pattern transfer into silicon oxide and silicon nitride using an internally fabricated ASML DUV (248nm) patterned quartz template.  The P-NIL process utilizes a bilayer resist system in which the first resist layer (200nm) is purely organic, while the upper UV resist layer (90nm) contains silicon.  After...

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