National Nanotechnology Infrastructure Network

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Process Blogs containing Plasma Therm

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Deep Silicon Etching at Stanford-Plasma Therm Versaline DSE

02.26.13

Justin Snapp, Stanford Nanofabrication Facility

For microelectromechanical systems (MEMS) and other applications, deep reactive ion etching (DRIE) of silicon is an important process enabling deep etching and high aspect ratio structures.  To achieve high aspect ratio structures and high selectivity to the masking material, DRIE utilizes a process of time division multiplexing (TDM) involving rapid cycles of deposition and etch steps. 

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