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Process Blogs containing RIE

Displaying 1 - 7 of 7

Nanoscale Etching of Silicon with High Mask Selectivity using SF6/C4F8/Ar ICP Etching in Plasma-Therm SLR 790 System

09.17.13

Yung-Jr Hung (NTUST, Taiwan) and Brian Thibeault (UCSB)

September 2013

Nanoscale and fine-scale etching recipes of silicon are needed more and more for silicon-based photonics and other applications at the UCSB facility. This particular work, done a few years ago, highlights the recipes developed in the UCSB nanofabrication facility for these applications. The original application pursued by this work was for silicon-based photonic crystal...

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NNIN Etch Workshop Summary and NNIN Dry Etch Capabilities

06.12.13

Vince Genova

Cornell NanoScale Science and Technology Facility

A NNIN Etch Workshop for NNIN Staff was held at Cornell University on May 21-22, 2013.  This was the third NNIN etch workshop held at Cornell since 2006.  Etch personnel from every NNIN site attended and presented information on their current etch capabilities, along with current process results.   Equipment details such as current gas chemistries, wafer sizes, temperature ranges and many others...

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Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry at the UCSB Nanofabrication Facility

03.27.13

Ning Cao, PhD. UCSB Nanofab Development Engineer
Brian Thibeault, Ph D. UCSB Nanofab Project Scientist
Steve Nichols, Ph D.

For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-...

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DRIE on Si and Dielectrics at Michigan Lurie Nanofabrication Facility

01.29.13

Kevin Owen , University of Michigan
Posted January 2013

With the recent expansion at the LNF, three new SPTS ICP systems were installed: two Pegasus deep silicon etchers and one APS system, designed for deep glass and dielectric etching. These tools have pushed the limits of high aspect ratio plasma etching. The first part of this paper covers deep silicon etching using the SPTS Pegasus tool, including standard process capabilities as well as two novel...

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Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry (UCSB)

01.03.13

Ning Cao, PhD. UCSB Nanofab Development Engineer

For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-trenching at the base of the structure and bowing of the sidewalls due to ion...

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Photocurable Nanoimprint (P-NIL) Process for Patterning Nitride and Oxide (Cornell)

12.21.12

Vincent Genova, Process Engineer, Cornell
Posted Dec. 2012

The recently established photocurable nanoimprint (P-NIL) process has been demonstrated with pattern transfer into silicon oxide and silicon nitride using an internally fabricated ASML DUV (248nm) patterned quartz template.  The P-NIL process utilizes a bilayer resist system in which the first resist layer (200nm) is purely organic, while the upper UV resist layer (90nm) contains silicon.  After...

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High aspect ratio etching of sub 100 nm structures in dielectrics

10.15.12

Significant Upgrade to the Oxford PlasmaLab 100 at Cornell for Nanoscale Dielectric Etching Enables Improved Etching of High Aspect Ratio Dielectric Structures

Vincent Genova, CNF Process Engineer
Posted October 2012

Earlier this year, a substantial upgrade to the Oxford 100 ICP etch system at Cornell was completed.  This upgrade includes the installation of a large 12 gas pod, a gas ring manifold, and the latest version of the PLC.  The installation of a...

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