Process Blogs containing Stanford
Wafer Level AlGe Eutectic Bonding for MEMS-Electronic-Photonic Heterogeneous Integration
Niels Quack (1), Sangyoon Han (2), Ming C. Wu (3) Abstract: An AlGe eutectic wafer level bonding process is presented and...
1 : Postdoctoral Fellow at UC Berkeley, 253M Cory Hall, Berkeley, CA, 94720-1770, quack@eecs.berkeley.edu
2 : UC Berkeley, sangyoon@eecs.berkeley.edu, 3 : UC Berkeley, wu@eecs.berkeley.edu
Atomic Layer Deposition of SrO at Stanford Nanofabrication Facility
Michelle Rincon and Woo Shik Jung, Stanford Nanofabrication Facility Our goal at the SNF is to enable users to develop any film they need using our Cambridge Nanotech Savannah (thermal ALD system) and Fiji (plasma-enhanced ALD) systems. One great example of this is our newly developed SrO deposition process. The SrO film was developed using the Bis(1,2,4-tritertiarybutylcyclopentadienyl)strontium precursor. Since this precursor has a low vapor pressure (0.6mmHg at...
Deep Silicon Etching at Stanford-Plasma Therm Versaline DSE
Justin Snapp, Stanford Nanofabrication Facility For microelectromechanical systems (MEMS) and other applications, deep reactive ion etching (DRIE) of silicon is an important process enabling deep etching and high aspect ratio structures. To achieve high aspect ratio structures and high selectivity to the masking material, DRIE utilizes a process of time division multiplexing (TDM) involving rapid cycles of deposition and etch steps.