National Nanotechnology Infrastructure Network

National Nanotechnology Infrastructure Network

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Process Blogs containing UCSB

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Nanoscale Etching of Silicon with High Mask Selectivity using SF6/C4F8/Ar ICP Etching in Plasma-Therm SLR 790 System

09.17.13

Yung-Jr Hung (NTUST, Taiwan) and Brian Thibeault (UCSB)

September 2013

Nanoscale and fine-scale etching recipes of silicon are needed more and more for silicon-based photonics and other applications at the UCSB facility. This particular work, done a few years ago, highlights the recipes developed in the UCSB nanofabrication facility for these applications. The original application pursued by this work was for silicon-based photonic crystal...

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Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry at the UCSB Nanofabrication Facility

03.27.13

Ning Cao, PhD. UCSB Nanofab Development Engineer
Brian Thibeault, Ph D. UCSB Nanofab Project Scientist
Steve Nichols, Ph D.

For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-...

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Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry (UCSB)

01.03.13

Ning Cao, PhD. UCSB Nanofab Development Engineer

For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-trenching at the base of the structure and bowing of the sidewalls due to ion...

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