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Dry Etching of InP-based Materials using Cl2/H2/Ar Chemistry (UCSB)

01.03.13

Ning Cao, PhD. UCSB Nanofab Development Engineer

For InP-based photonic circuits and other applications, it is often desired that the etch profiles are vertical and smooth so that light scattering losses are minimized. Cl2/N2 or Cl2/Ar ICP etching of InP at 200C sample temperature is often used to create smooth, high aspect ratio structures. However, these etches often produce micro-trenching at the base of the structure and bowing of the sidewalls due to ion...

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