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Process Blogs containing genova@cnf.cornell.edu

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Photocurable Nanoimprint (P-NIL) Process for Patterning Nitride and Oxide (Cornell)

12.21.12

Vincent Genova, Process Engineer, Cornell
Posted Dec. 2012

The recently established photocurable nanoimprint (P-NIL) process has been demonstrated with pattern transfer into silicon oxide and silicon nitride using an internally fabricated ASML DUV (248nm) patterned quartz template.  The P-NIL process utilizes a bilayer resist system in which the first resist layer (200nm) is purely organic, while the upper UV resist layer (90nm) contains silicon.  After...

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Nanonex NX-2500 Nanoimprint Lithography Update (Cornell)

10.21.12

Vincent Genova, Process Engineer, CNF
Posted Oct. 2012

Nanoimprint lithography (NIL) has the advantage of high throughput with sub-10nm resolution.  NIL is included on the ITRS roadmap for 45nm and below nodes for advanced electronic devices.  In addition to electronics, NIL is a benefit to many applications including displays, nanophotonics, biotechnology, and MEMS.

The NX-2500 has both thermal imprint (T-NIL) and photocurable imprint (P-NIL)...

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Primaxx Vapor HF Release for Oxide MEMS Structures at Cornell

10.15.12

Vincent Genova, CNF Process Engineer
Posted Oct. 2012

The recently installed Primaxx uEtch vapor HF system is a valuable addition to CNF’s process capabilties.  The system provides a single step release process of MEMS structures without stiction or the use of critical point drying.  The dry release process allows for highly selective and uniform etching of silicon dioxide (SiO2).  Undercut etch rates as high as 0.25um/min can be obtained along with high...

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New ALD Processes at Cornell on the Oxford FlexAl

10.15.12

Vincent Genova, CNF Process Engineer
Posted October 2012

Since CNF’s purchase of an Oxford Instruments FlexAL ALD system in 2008, we have continued to develop new thin film processes, both on our own and cooperatively with Oxford.  Our ALD system has both thermal and plasma enhanced (PEALD) deposition capability for materials derived from hafnium (Hf), aluminum (Al), tantalum (Ta), and silicon (Si) based organometallic and organosilane precursors.  In addition...

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High aspect ratio etching of sub 100 nm structures in dielectrics

10.15.12

Significant Upgrade to the Oxford PlasmaLab 100 at Cornell for Nanoscale Dielectric Etching Enables Improved Etching of High Aspect Ratio Dielectric Structures

Vincent Genova, CNF Process Engineer
Posted October 2012

Earlier this year, a substantial upgrade to the Oxford 100 ICP etch system at Cornell was completed.  This upgrade includes the installation of a large 12 gas pod, a gas ring manifold, and the latest version of the PLC.  The installation of a...

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