Wafer Level AlGe Eutectic Bonding for MEMS-Electronic-Photonic Heterogeneous Integration
Niels Quack (1), Sangyoon Han (2), Ming C. Wu (3)
1 : Postdoctoral Fellow at UC Berkeley, 253M Cory Hall, Berkeley, CA, 94720-1770, email@example.com
2 : UC Berkeley, firstname.lastname@example.org, 3 : UC Berkeley, email@example.com
Abstract: An AlGe eutectic wafer level bonding process is presented and characterized for heterogeneous integration of silicon photonics, CMOS integrated electronic circuits and active III-V components.
This paper details a process for eutectic bonding of photonic and electronic chips, developed at Stanford SNF in cooperation with the Marvel Lab at UCB. This paper was presented at International Nano-Optoelectronics Workshop