Blanka Magyari-Kope, Ph.D
Blanka Magyari-Köpe received her Ph.D. degree in physics from the Royal Institute of Technology, Stockholm, Sweden, in 2003. Her research interests include adapting and applying high-precision, accurate, and efficient quantum mechanical modeling to real applications. She had been working on the analysis and fundamental understanding of electronic properties of novel and technologically relevant materials, i.e., perovskites, metal alloys, hydrogen storage materials, metal gate/high-k MOS structures and RRAM device materials. Currently, she is involved in several projects aimed to design solutions for future electronics, which address atomic level manipulation in order to achieve increased performance in devices. These include understanding the RRAM switching mechanism and the role and control of nanointerfaces between metallic, insulating, and semiconducting materials. She has given over 24 invited talks and has published more than 40 scientific papers.
Publications and Invited Talks:
Selected Journal Publications
1. B. Magyari-Köpe, S.G. Park, H.-D. Lee and Y. Nishi, First principles calculations of oxygen vacancy ordering effects in resistance change memory materials incorporating binary transition metal oxides J. Mat. Sci. 47, 7498, 2012.
2. G. Grimvall, B. Magyari-Köpe, V. Ozolins, and K. Persson, Lattice instabilities in metallic elements, Rev. Mod. Phys. 84, 945, 2012.
3. K. Kamiya, M. Yang, S. Park, B. Magyari-Köpe, Y. Nishi, M. Niwa, and K. Shiraishi, ON-OFF switching mechanism of resistive random access memories based on the formation and disruption of oxygen vacancy conducting channels, Appl. Phys. Lett 100, 073502, 2012.
4. S. Gupta, B. Vincent, D. Lin, M. Gunji, A. Firrincieli, F. Gencarelli, B. Magyari-Köpe, B. Yang, B. Douhard, J. Delmotte, A. Franquet, M. Caymax, J. Dekoster, Y. Nishi, K. Saraswat, GeSn channel nMOSFETs: material potential and technological outlook, Tech. Digest, VLSI, 2012.
5. S. Gupta, R. Chen, B. Magyari-Köpe, H. Lin, B. Yang, A. Nainani, Y. Nishi, J. S. Harris and K. C. Saraswat, GeSn technology: extending the Ge electronics roadmap IEDM Tech. Digest, 398, 2011.
6. S. Park, B. Magyari-Köpe, and Y. Nishi, Theoretical study of the resistance switching mechanism in rutile TiO2−x for ReRAM: the role of oxygen vacancies and hydrogen impurities, Tech. Digest VLSI Tech. Symp., 2011.
7. B. Magyari-Köpe, M. Tendulkar, S.-G. Park, H. Lee, and Y. Nishi, “Resistive switching mechanisms in random access memory devices incorporating transition metal oxides: TiO2, NiO and Pr0.7Ca0.3MnO3”, Nanotechnology 22, 254029, 2011
8. S.-G. Park, B. Magyari-Köpe, and Y. Nishi, The impact of oxygen vacancies on the formation of a conductive channel in rutile TiO2”, IEEE Electron Device Letters, 32, 197, 2011
9. H.D. Lee, B. Magyari-Köpe, and Y. Nishi, Model of Metallic Filament Formation and Rupture in NiO for Unipolar Switching, Phys. Rev. B 81, 193202, 2010.
10. S.-G. Park, B. Magyari-Köpe, and Y. Nishi, Electronic correlation effects in reduced rutile TiO2 within the LDA+U method, Phys Rev B 81, 115109, 2010.
11. L. Leem, A. Srivastava, S. Li, B. Magyari-Köpe, G. Iannaccone, J.S. Harris, G. Fiori, Multi-scale simulations of partially unzipped CNT heterojunction tunneling field effect transistor, IEDM Tech. Digest, 740, 2010.
12. M. Kobayashi, T. Irisawa, B. Magyari-Köpe, K. Saraswat, H. S. P. Wong and Y. Nishi, Uniaxial stress engineering for high performance Ge NMOSFETs IEEE Trans. Electron Devices, 57, 1037, 2010.
13. L. Geng, B. Magyari-Köpe, Y. Nishi, Image charge and dipole combination model for the Schottky barrier tuning at the dopant segregated metal/semiconductor interface , IEEE Electron Device Letters 30, 963, 2009.
14. X. Zhang, J. Li, M. Grubbs, M. Deal, B. Magyari-Köpe, B.M. Clemens, Y. Nishi Physical model of the impact of metal grain work function variability on emerging dual metal gate MOSFETs and its implication for SRAM reliability, IEDM Tech. Digest, 57, 2009.
Selected Invited Conference Presentations
1. (Keynote) Blanka Magyari-Köpe and Yoshio Nishi, “Recent Progress in Modeling the Operation of Resistive Switching Memory Devices”, October 2012, ECS Prime, Honolulu, USA.
1. Blanka Magyari-Köpe and Yoshio Nishi, “Resistive Switching in Transition Metal Oxide ReRAM Devices”, September 2012, Solid State Devices and Materials (SSDM), Kyoto, Japan.
2. Blanka Magyari-Köpe and Yoshio Nishi, “Progress towards understanding the resistive switching process in RRAM devices”, August 2012, Flash Memory Summit, Santa Clara, USA.
3. Blanka Magyari-Köpe and Yoshio Nishi, “Recent progress in resistive switching memory”, May 2012, European Materials Research Society (EMRS) Spring Meeting, Strasbourg, France.
4. Blanka Magyari-Köpe and Yoshio Nishi, “Modeling the resistance switching mechanism in RRAM devices: the role of oxygen vacancies and impurities”, April 2012, Materials Research Society (MRS) Spring Meeting, San Francisco, USA.
5. Blanka Magyari-Köpe and Yoshio Nishi, “Progress and challenges in ReRAM, April 2011, 8th Annual Symposium on Emerging Non-Volatile Memory Technologies”, San Francisco Bay Area Nanotechnology Council, Santa Clara, CA, USA.
6. Blanka Magyari-Köpe and Yoshio Nishi, “Ab initio simulations of the resistance switching in RRAM devices: the role of oxygen vacancies”, October 2011, 8th International Symposium on Advanced Gate Stack Technology, Bolton Landing, NY, USA.
7. Blanka Magyari-Köpe and Yoshio Nishi, “Understanding the switching mechanism in RRAM devices and the dielectric breakdown of ultrathin high-k gate stacks from first principles calculations”, June 2011, Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors III, Hong-Kong, China.